Infineon, Type N-Channel IGBT Module, 150 A 1200 V AG-34MM-1, Clamp

The image is for reference only, please refer to product details and specifications

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
166-0838
Mfr. Part No.:
FF150R12RT4HOSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

150A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

79W

Package Type

AG-34MM-1

Mount Type

Clamp

Channel Type

Type N

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

30.2mm

Length

94mm

Width

34 mm

Automotive Standard

No

COO (Country of Origin):
MY

Infineon IGBT Module, 150A Maximum Continuous Collector Current, 1200V Maximum Collector Emitter Voltage - FF150R12RT4HOSA1


This IGBT module is designed for high-frequency switching applications, effectively combining two transistors in series configuration. It operates efficiently within a temperature range of -40°C to +150°C. With a Compact package size of 94 x 34 x 30.2 mm, this module is Ideal for integration into various industrial systems.

Features & Benefits


• Maximum continuous collector current rated at 150A ensures reliable performance

• Collector-emitter voltage supports up to 1200V for robust use

• Low switching losses enhance overall energy efficiency

• Isolated base plate improves thermal management and reliability

• AG-34MM-1 package type simplifies installation in panel-mounted configurations

Applications


• Suitable for motor drives in automation systems

• Utilised in uninterruptible power supplies for enhanced reliability

• Effective in high-frequency switching across industries

• Useful in power electronic converters for seamless operations

• Works well in conjunction with industrial automation frameworks

What are the thermal characteristics of this IGBT module?


The module features a thermal resistance from junction to case of 0.19 K/W, which is essential for maintaining operational efficiency. It also supports extensive power cycling with a specified 300,000 cycles at a junction temperature of 125°C and a temperature differential of 50K.

How does this IGBT module perform under high temperatures?


It operates effectively at a maximum junction temperature of 150°C, ensuring durability in demanding applications while maintaining a low VCEsat, which is further enhanced by a positive temperature coefficient for stable performance.

What makes the gate drive characteristics advantageous?


This IGBT module features a gate charge of 1.25μC, allowing for swift switching times, facilitating high-frequency operations essential in modern industrial applications. It also supports gate-emitter voltages of ±20V for flexible drive conditioning.

Is this product suitable for power electronics in automotive applications?


Yes, its robust specifications and reliability make it a viable option for power electronics in automotive systems where high efficiency and reliability are paramount.

Related links