Infineon, Type N-Channel IGBT Module, 54 A 1200 V AG-EASY2B-1, Clamp

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Subtotal (1 tray of 15 units)*

TWD22,603.50

(exc. GST)

TWD23,733.60

(inc. GST)

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Units
Per unit
Per Tray*
15 - 15TWD1,506.90TWD22,603.50
30 +TWD1,476.70TWD22,150.50

*price indicative

RS Stock No.:
145-9419
Mfr. Part No.:
FP35R12W2T4BOMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

54A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

215W

Package Type

AG-EASY2B-1

Mount Type

Clamp

Channel Type

Type N

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.25V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Width

48 mm

Series

EasyPIM

Height

12mm

Standards/Approvals

ULapproved(E83335)

Length

56.7mm

Automotive Standard

No

RoHS Status: Not Applicable

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.

The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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