Infineon FS1150R08A8P3LMCHPSA1, N-Channel Half Bridge IGBT, 600 A 750 V, Screw

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Subtotal (1 unit)*

TWD38,481.00

(exc. GST)

TWD40,405.05

(inc. GST)

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1 +TWD38,481.00

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RS Stock No.:
349-029
Mfr. Part No.:
FS1150R08A8P3LMCHPSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

600A

Maximum Collector Emitter Voltage Vceo

750V

Number of Transistors

6

Maximum Power Dissipation Pd

1kW

Configuration

Half Bridge

Mount Type

Screw

Channel Type

N

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.22V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

185°C

Standards/Approvals

RoHS, UL 94 V0

Automotive Standard

AQG 324

COO (Country of Origin):
DE
The Infineon HybridPACK Drive G2 module is a very compact six pack power module with enhanced package optimized for hybrid and electric vehicles. The power module implements Infineon’s next generation chip technology EDT3 750V, optimized for electric drive train applications, from mid to high range automotive power classes.

Low inductive design

4.2 kV DC 1 second insulation

High creepage and clearance distances

Direct cooled PinFin base plate

PCB and cooler assembly guidelines

PressFIT contact technology

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