Infineon FS1150R08A8P3LBCHPSA1, N-Channel Half Bridge IGBT, 1.15 kA 750 V AQG-324, Screw

View all IGBTs

Subtotal (1 unit)*

TWD38,481.00

(exc. GST)

TWD40,405.05

(inc. GST)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later
Units
Per unit
1 +TWD38,481.00

*price indicative

RS Stock No.:
349-028
Mfr. Part No.:
FS1150R08A8P3LBCHPSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current Ic

1.15kA

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

750V

Number of Transistors

6

Maximum Power Dissipation Pd

10000W

Configuration

Half Bridge

Package Type

AQG-324

Mount Type

Screw

Channel Type

N

Maximum Collector Emitter Saturation Voltage VceSAT

1.09V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, UL 94 V0

Automotive Standard

AQG 324

COO (Country of Origin):
DE
The Infineon HybridPACK Drive G2 module is a very compact six pack power module with enhanced package optimized for hybrid and electric vehicles. The power module implements Infineon’s next generation chip technology EDT3 750V, optimized for electric drive train applications, from mid to high range automotive power classes.

Low inductive design

4.2 kV DC 1 second insulation

High creepage and clearance distances

Direct cooled PinFin base plate

PCB and cooler assembly guidelines

PressFIT contact technology

Related links