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IXYS IXGH24N170, N-Channel IGBT, 50 A 1.7 kV, 3-Pin TO-247AD, Through Hole, Surface

RS Stock No.:: 194-883
Distrelec Article No.:: 302-53-413
Mfr. Part No.:: IXGH24N170
Manufacturer:: IXYS

IXYS IXGH24N170, N-Channel IGBT, 50 A 1.7 kV, 3-Pin TO-247AD, Through Hole, Surface

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Subtotal (1 unit)*

TWD798.00

(exc. GST)

TWD837.90

(inc. GST)

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Units	Per unit
1 - 7	TWD798.00
8 - 14	TWD783.00
15 +	TWD765.00

*price indicative

RS Stock No.:: 194-883
Distrelec Article No.:: 302-53-413
Mfr. Part No.:: IXGH24N170
Manufacturer:: IXYS

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	IXYS
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	50A
	Maximum Collector Emitter Voltage Vceo	1.7kV
	Maximum Power Dissipation Pd	250W
	Package Type	TO-247AD
	Mount Type	Through Hole, Surface
	Channel Type	N
	Pin Count	3
	Switching Speed	290ns
	Maximum Collector Emitter Saturation Voltage VceSAT	3.3V
	Minimum Operating Temperature	-55°C
	Maximum Gate Emitter Voltage VGEO	±20 V
	Maximum Operating Temperature	150°C
	Height	19.1mm
	Standards/Approvals	UL 94 V-0
	Length	20.32mm
	Width	16.26mm
	Series	IXGH
	Automotive Standard	No

	Select all
	Brand IXYS
	Product Type IGBT
	Maximum Continuous Collector Current Ic 50A
	Maximum Collector Emitter Voltage Vceo 1.7kV
	Maximum Power Dissipation Pd 250W
	Package Type TO-247AD
	Mount Type Through Hole, Surface
	Channel Type N
	Pin Count 3
	Switching Speed 290ns
	Maximum Collector Emitter Saturation Voltage VceSAT 3.3V
	Minimum Operating Temperature -55°C
	Maximum Gate Emitter Voltage VGEO ±20 V
	Maximum Operating Temperature 150°C
	Height 19.1mm
	Standards/Approvals UL 94 V-0
	Length 20.32mm
	Width 16.26mm
	Series IXGH
	Automotive Standard No

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

IXYS IXGH24N170, N-Channel IGBT, 50 A 1.7 kV, 3-Pin TO-247AD, Through Hole, Surface

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IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

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