IXYS IXYH30N170C, N-Channel IGBT, 100 A 1.7 kV, 3-Pin TO-247AD, Through Hole
- RS Stock No.:
- 146-4252
- Mfr. Part No.:
- IXYH30N170C
- Manufacturer:
- IXYS
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TWD17,505.00
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TWD18,380.40
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- Shipping from December 16, 2027
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Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 30 - 30 | TWD583.50 | TWD17,505.00 | - |
| 60 - 90 | TWD566.10 | TWD16,983.00 | 2% |
| 120 + | TWD549.70 | TWD16,491.00 | 5% |
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- RS Stock No.:
- 146-4252
- Mfr. Part No.:
- IXYH30N170C
- Manufacturer:
- IXYS
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current Ic | 100A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1.7kV | |
| Maximum Power Dissipation Pd | 937W | |
| Package Type | TO-247AD | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 4V | |
| Maximum Operating Temperature | 175°C | |
| Series | High Voltage | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current Ic 100A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1.7kV | ||
Maximum Power Dissipation Pd 937W | ||
Package Type TO-247AD | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 4V | ||
Maximum Operating Temperature 175°C | ||
Series High Voltage | ||
Standards/Approvals No | ||
Automotive Standard No | ||
IXYS XPT (eXtreme-light Punch Through) IGBTs with current ratings ranging from 29A to 178A, are well-suited for high-voltage, high-speed power conversion applications. Designed using the proprietary thin-wafer XPT technology and the state-of-the-art IGBT process, these devices display such qualities as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Also, thanks to the positive temperature coefficient of their on-state voltage, the new high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage device ones.
Thin wafer XPT technology
Low on-state voltages VCE(sat)
Co-packed fast recovery diodes
Positive temperature coefficient of VCE(sat)
High efficiency
Increased reliability of power systems
Applications
Pulser circuits
Laser and X-ray generators
High-voltage power supplies
High-voltage test equipment
Capacitor discharge circuits
AC switches
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