STMicroelectronics STDRIVEG210Q 2, 1.25 mA 18-Pin 6.6V, QFN-18L
- RS Stock No.:
- 648-110
- Mfr. Part No.:
- STDRIVEG210Q
- Manufacturer:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD119.00
(exc. GST)
TWD124.95
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 300 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | TWD119.00 |
| 10 - 24 | TWD105.00 |
| 25 - 99 | TWD95.00 |
| 100 - 499 | TWD91.00 |
| 500 + | TWD88.00 |
*price indicative
- RS Stock No.:
- 648-110
- Mfr. Part No.:
- STDRIVEG210Q
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Gate Driver | |
| Output Current | 1.25mA | |
| Pin Count | 18 | |
| Package Type | QFN-18L | |
| Fall Time | 11ns | |
| Rise Time | 22ns | |
| Minimum Supply Voltage | 6.6V | |
| Maximum Supply Voltage | 6.6V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 1mm | |
| Length | 5mm | |
| Series | STDRIVEG210 | |
| Standards/Approvals | ANSI/ESDA/JEDEC JS-001-2017: 2kV, ANSI/ESDA/JEDEC JS-002-2018: 1kV | |
| Width | 4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Gate Driver | ||
Output Current 1.25mA | ||
Pin Count 18 | ||
Package Type QFN-18L | ||
Fall Time 11ns | ||
Rise Time 22ns | ||
Minimum Supply Voltage 6.6V | ||
Maximum Supply Voltage 6.6V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Height 1mm | ||
Length 5mm | ||
Series STDRIVEG210 | ||
Standards/Approvals ANSI/ESDA/JEDEC JS-001-2017: 2kV, ANSI/ESDA/JEDEC JS-002-2018: 1kV | ||
Width 4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The STMicroelectronics Half-bridge gate driver optimized for N‑channel Enhancement Mode GaN transistors, supporting up to 220 V operation via an integrated bootstrap diode. It delivers high-speed switching with minimal propagation delay, matched timing, and robust current drive due to integrated LDOs. Designed for both soft and hard switching modes, it features rapid wake-up, interlock protection, and tailored UVLOs to enhance efficiency during burst operations.
Separated logic inputs and shutdown pin
Fault pin for over temperature and UVLO reporting
Stand by function for low consumption mode
RoHS compliant
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