Infineon 256 kB 2 Wire I2C FRAM 8-Pin SOIC, FM24W256-G
- RS Stock No.:
- 125-4217
- Mfr. Part No.:
- FM24W256-G
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD193.00
(exc. GST)
TWD202.65
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 358 unit(s) shipping from July 06, 2026
- Plus 233 unit(s) shipping from July 13, 2026
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Units | Per unit |
|---|---|
| 1 - 24 | TWD193.00 |
| 25 - 48 | TWD188.00 |
| 49 + | TWD176.00 |
*price indicative
- RS Stock No.:
- 125-4217
- Mfr. Part No.:
- FM24W256-G
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 256kB | |
| Product Type | FRAM | |
| Organisation | 32K x 8 bit | |
| Interface Type | 2 Wire I2C | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 3000ns | |
| Mount Type | Surface | |
| Maximum Clock Frequency | 1MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Height | 1.38mm | |
| Width | 3.98mm | |
| Standards/Approvals | No | |
| Length | 4.97mm | |
| Maximum Operating Temperature | 85°C | |
| Minimum Operating Temperature | -40°C | |
| Maximum Supply Voltage | 5.5V | |
| Number of Words | 32k | |
| Minimum Supply Voltage | 2.7V | |
| Automotive Standard | AEC-Q100 | |
| Number of Bits per Word | 8 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 256kB | ||
Product Type FRAM | ||
Organisation 32K x 8 bit | ||
Interface Type 2 Wire I2C | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 3000ns | ||
Mount Type Surface | ||
Maximum Clock Frequency 1MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Height 1.38mm | ||
Width 3.98mm | ||
Standards/Approvals No | ||
Length 4.97mm | ||
Maximum Operating Temperature 85°C | ||
Minimum Operating Temperature -40°C | ||
Maximum Supply Voltage 5.5V | ||
Number of Words 32k | ||
Minimum Supply Voltage 2.7V | ||
Automotive Standard AEC-Q100 | ||
Number of Bits per Word 8 | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
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