Infineon 1 MB 2 Wire I2C FRAM 8-Pin SOIC
- RS Stock No.:
- 188-5405
- Mfr. Part No.:
- FM24V10-G
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 97 units)*
TWD46,579.40
(exc. GST)
TWD48,908.37
(inc. GST)
Add 97 units to get free delivery
In Stock
- 97 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 97 - 97 | TWD480.20 | TWD46,579.40 |
| 194 + | TWD469.60 | TWD45,551.20 |
*price indicative
- RS Stock No.:
- 188-5405
- Mfr. Part No.:
- FM24V10-G
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | FRAM | |
| Memory Size | 1MB | |
| Organisation | 128K x 8 bit | |
| Interface Type | 2 Wire I2C | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 450ns | |
| Maximum Clock Frequency | 3.4MHz | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Length | 4.97mm | |
| Standards/Approvals | No | |
| Height | 1.38mm | |
| Width | 3.98 mm | |
| Maximum Operating Temperature | 85°C | |
| Number of Bits per Word | 8 | |
| Minimum Supply Voltage | 2V | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Number of Words | 128k | |
| Automotive Standard | AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type FRAM | ||
Memory Size 1MB | ||
Organisation 128K x 8 bit | ||
Interface Type 2 Wire I2C | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 450ns | ||
Maximum Clock Frequency 3.4MHz | ||
Mount Type Surface | ||
Package Type SOIC | ||
Pin Count 8 | ||
Length 4.97mm | ||
Standards/Approvals No | ||
Height 1.38mm | ||
Width 3.98 mm | ||
Maximum Operating Temperature 85°C | ||
Number of Bits per Word 8 | ||
Minimum Supply Voltage 2V | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
Number of Words 128k | ||
Automotive Standard AEC-Q100 | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
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