JFETs

JFETs
A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.
What does JFET stand for?
JFET stands for junction field-effect transistor
N-Channel JFET Construction
The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
P-Channel JFET Construction
The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
Features and Benefits
• High input impedance
• Voltage controlled device
• High degree of isolation between the input and the output
• Less noise
What are they also known as?
JUGFET
What are JFET transistors used for?
JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.
What is the difference between a JFET & BJT (Bipolar Junction Transistor)?
The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.
What is doping of semiconductors?
Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 166-2669
Mfr. Part No.MMBFJ177
TWD4
Each (On a Reel of 3000)
units
P 1.5 → 20mA - +30 V -30V Single Single 300 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 671-1141
Mfr. Part No.MMBFJ177
TWD11
Each (In a Pack of 5)
units
P 1.5 → 20mA - +30 V -30V Single Single 300 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 626-2434
Mfr. Part No.BF862,215
BrandNXP
TWD15
Each (In a Pack of 10)
units
N 10 → 25mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 103-8037
Mfr. Part No.BF862,215
BrandNXP
TWD9
Each (On a Reel of 3000)
units
N 10 → 25mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 806-1719
Mfr. Part No.BF256B
TWD9
Each (In a Pack of 50)
units
N 6 → 13mA - -30 V 30V Single Single - Through Hole TO-92 3 - - 4.58 x 3.86 x 4.58mm
RS Stock No. 124-1384
Mfr. Part No.BF256B
TWD3
Each (In a Bag of 1000)
units
N 6 → 13mA - -30 V 30V Single Single - Through Hole TO-92 3 - - 4.58 x 3.86 x 4.58mm
RS Stock No. 761-3688
Mfr. Part No.MMBFJ201
TWD7
Each (In a Pack of 25)
units
N 0.3 → 1.5mA - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 806-1747
Mfr. Part No.J105
TWD20
Each (In a Pack of 10)
units
N 500mA - -25 V 25V Single Single 3 Ω Through Hole TO-92 3 160pF 160pF 5.2 x 4.19 x 5.33mm
RS Stock No. 626-3229
Mfr. Part No.PMBF4391,215
BrandNXP
TWD10
Each (In a Pack of 10)
units
N 50 → 150mA 40 V -40 V 40V Single Single 30 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS Stock No. 166-2961
Mfr. Part No.J105
TWD9
Each (In a Bag of 10000)
units
N 500mA - -25 V 25V Single Single 3 Ω Through Hole TO-92 3 160pF 160pF 5.2 x 4.19 x 5.33mm
RS Stock No. 166-0242
Mfr. Part No.PMBFJ174,215
BrandNXP
TWD10
Each (On a Reel of 3000)
units
P 20 → 135mA 30 V +30 V 30V Single Single 85 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS Stock No. 166-0547
Mfr. Part No.PMBF4391,215
BrandNXP
TWD6
Each (On a Reel of 3000)
units
N 50 → 150mA 40 V -40 V 40V Single Single 30 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS Stock No. 166-1840
Mfr. Part No.MMBFJ201
TWD4
Each (On a Reel of 3000)
units
N 0.3 → 1.5mA - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 626-3263
Mfr. Part No.PMBFJ174,215
BrandNXP
TWD13
Each (In a Pack of 5)
units
P 20 → 135mA 30 V +30 V 30V Single Single 85 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS Stock No. 760-3123
Mfr. Part No.2SK208-R(TE85L,F)
BrandToshiba
TWD12
Each (In a Pack of 10)
units
N 0.3 → 0.75mA 10 V -30 V -50V Single Single - Surface Mount SOT-346 (SC-59) 3 - - 2.9 x 1.5 x 1.1mm
RS Stock No. 166-2696
Mfr. Part No.MMBF5457
TWD4
Each (On a Reel of 3000)
units
N 1 → 5mA - -25 V 25V Single Single - Surface Mount SOT-23 3 3pF 7pF 2.92 x 1.3 x 0.93mm
RS Stock No. 112-4185
Mfr. Part No.PMBF4393,215
BrandNXP
TWD10
Each
units
N 50 → 150mA 40 V -40 V 40V Single Single 100 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS Stock No. 163-2021
Mfr. Part No.2SK3557-7-TB-E
TWD6
Each (On a Reel of 3000)
units
N 16 → 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 792-5170
Mfr. Part No.2SK932-22-TB-E
TWD9
Each (In a Pack of 25)
units
N 7.3 → 12mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 738-7607
Mfr. Part No.2N4392CSM
BrandSemelab
TWD2,172
Each
units
N 25 → 75mA 40 V +40 V 40V Single Single 60 Ω Surface Mount SOT-23 3 - - 3.05 x 2.54 x 1.02mm