N-Channel MOSFET, 230 mA, 350 V Depletion, 4-Pin TO-243AA Microchip DN3535N8-G
- RS Stock No.:
- 178-5277
- Mfr. Part No.:
- DN3535N8-G
- Manufacturer:
- Microchip
Temporarily out of stock - back order for despatch 03/06/2024, delivery within 6 working days
Added
Price (VAT excluded) Each (On a Reel of 2000)
TWD24.30
(exc. GST)
TWD25.52
(inc. GST)
| Units | Per unit | Per Reel* |
| 2000 - 8000 | TWD24.30 | TWD48,600.00 |
| 10000 + | TWD23.10 | TWD46,200.00 |
| *price indicative | ||
- RS Stock No.:
- 178-5277
- Mfr. Part No.:
- DN3535N8-G
- Manufacturer:
- Microchip
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Typical Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Microchip
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 230 mA |
| Maximum Drain Source Voltage | 350 V |
| Package Type | TO-243AA |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 10 Ω |
| Channel Mode | Depletion |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 1.6 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 2.6mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Length | 4.6mm |
| Height | 1.6mm |
| Minimum Operating Temperature | -55 °C |