Cypress Semiconductor SRAM, CY62128EV30LL-45ZAXI- 1Mbit

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor

The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

Very high speed: 45 ns
Temperature ranges:
Industrial: –40 °C to +85 °C
Wide voltage range: 2.2 V to 3.6 V
Pin compatible with CY62128DV30
Ultra low standby power
Typical standby current: 1 μA
Maximum standby current: 4 μA
Ultra low active power
Typical active current: 1.3 mA at f = 1 MHz
Easy memory expansion with CE1, CE2, and OE features
Automatic power-down when deselected
Complementary metal oxide semiconductor (CMOS) for optimum speed and power
Offered in Pb-free 32-pin small outline integrated circuit (SOIC),32-pin thin small outline package (TSOP) Type I, and 32-pin shrunk thin small outline package (STSOP) packages

SRAM (Static Random Access Memory)

Specifications
Attribute Value
Memory Size 1Mbit
Organisation 128K x 8 bit
Number of Words 128K
Number of Bits per Word 8bit
Maximum Random Access Time 45ns
Address Bus Width 8bit
Clock Frequency 1MHz
Low Power Yes
Mounting Type Surface Mount
Package Type STSOP
Pin Count 32
Dimensions 11.9 x 8.1 x 1.05mm
Height 1.05mm
Maximum Operating Temperature -85 °C
Minimum Operating Temperature -40 °C
Length 11.9mm
Maximum Operating Supply Voltage 3.6 V
Width 8.1mm
Minimum Operating Supply Voltage 2.2 V
210 In stock for delivery within 6 working days
Price (VAT excluded) Each (In a Pack of 5)
TWD 69.40
(exc. GST)
TWD 72.90
(inc. GST)
units
Per unit
Per Pack*
5 - 20
TWD69.40
TWD347.00
25 - 95
TWD62.00
TWD310.00
100 - 245
TWD54.80
TWD274.00
250 - 495
TWD54.20
TWD271.00
500 +
TWD52.80
TWD264.00
*price indicative
Packaging Options: