Intelligent Memory IME5108SDBETG-75I SDRAM 512 MB Surface, 54-Pin 16 bit FBGA
- RS Stock No.:
- 588-663
- Mfr. Part No.:
- IME5108SDBETG-75I
- Manufacturer:
- Intelligent Memory
Subtotal (1 unit)*
TWD1,244.00
(exc. GST)
TWD1,306.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 9 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | TWD1,244.00 |
*price indicative
- RS Stock No.:
- 588-663
- Mfr. Part No.:
- IME5108SDBETG-75I
- Manufacturer:
- Intelligent Memory
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Intelligent Memory | |
| Product Type | SDRAM | |
| Memory Size | 512MB | |
| Organisation | 32M x 16 | |
| Data Bus Width | 16bit | |
| Maximum Clock Frequency | 166MHz | |
| Number of Bits per Word | 64 | |
| Maximum Random Access Time | 6ns | |
| Number of Words | 16777216 | |
| Mount Type | Surface | |
| Package Type | FBGA | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 54 | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | JEDEC | |
| Series | IME51 | |
| Minimum Supply Voltage | 3V | |
| Automotive Standard | AEC-Q100 | |
| Supply Current | 170mA | |
| Maximum Supply Voltage | 3.6V | |
| Select all | ||
|---|---|---|
Brand Intelligent Memory | ||
Product Type SDRAM | ||
Memory Size 512MB | ||
Organisation 32M x 16 | ||
Data Bus Width 16bit | ||
Maximum Clock Frequency 166MHz | ||
Number of Bits per Word 64 | ||
Maximum Random Access Time 6ns | ||
Number of Words 16777216 | ||
Mount Type Surface | ||
Package Type FBGA | ||
Minimum Operating Temperature -40°C | ||
Pin Count 54 | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals JEDEC | ||
Series IME51 | ||
Minimum Supply Voltage 3V | ||
Automotive Standard AEC-Q100 | ||
Supply Current 170mA | ||
Maximum Supply Voltage 3.6V | ||
- COO (Country of Origin):
- TW
The Intelligent Memory Four bank Synchronous DRAM is organized as 4 banks x 16Mbit x 8 (5108) or 4 banks x 8Mbit x 16 (5116). It achieves high-speed data transfer rates up to 166 MHz by using a chip architecture that prefetches multiple bits and synchronizes the output data to the system clock, ensuring fast and reliable operation.
Power down mode
Auto refresh and self refresh
Automatic and controlled precharge command
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