Infineon 650 V 10 A Rectifier & Schottky Diode Rectifier Diode 2-Pin TO-247 IDW20G65C5BXKSA2
- RS Stock No.:
- 273-2955
- Mfr. Part No.:
- IDW20G65C5BXKSA2
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD317.00
(exc. GST)
TWD332.85
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 278 unit(s) shipping from October 05, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | TWD317.00 |
| 5 - 9 | TWD312.00 |
| 10 - 24 | TWD289.00 |
| 25 - 49 | TWD265.00 |
| 50 + | TWD244.00 |
*price indicative
- RS Stock No.:
- 273-2955
- Mfr. Part No.:
- IDW20G65C5BXKSA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Dual | |
| Series | IDW20G65C5B | |
| Rectifier Type | Rectifier Diode | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 1.5V | |
| Peak Reverse Current Ir | 180μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Dual | ||
Series IDW20G65C5B | ||
Rectifier Type Rectifier Diode | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 1.5V | ||
Peak Reverse Current Ir 180μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon SiC schottky barrier diode has compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. It ha
Highest softness factor for ultimate softness and low EMI filtering
For applications switching between 18 kHz and 40 kHz
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