STMicroelectronics 650 V 10 A Diode 2-Pin PowerFLAT
- RS Stock No.:
- 203-3485P
- Mfr. Part No.:
- STPSC10H065DLF
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 203-3485P
- Mfr. Part No.:
- STPSC10H065DLF
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | PowerFLAT | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 1.95V | |
| Peak Reverse Current Ir | 85μA | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 850A | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.75mm | |
| Length | 7.9mm | |
| Standards/Approvals | RoHS | |
| Width | 7.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type PowerFLAT | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 1.95V | ||
Peak Reverse Current Ir 85μA | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 850A | ||
Maximum Operating Temperature 175°C | ||
Height 0.75mm | ||
Length 7.9mm | ||
Standards/Approvals RoHS | ||
Width 7.9mm | ||
Automotive Standard No | ||
The STMicroelectronics SiC diode is an ultra-high performance power Schottky diode, manufactured using a silicon carbide substrate. It has a wide band gap material that allows the design of a Schottky diode structure with a 650 V rating. No recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature, due to the schottky construction.
Less than 1 mm height package
High creep age package
No or negligible reverse recovery
Temperature independent switching behaviour
High forward surge capability
Very low drop forward voltage
Power efficient product
ECOPACK2 compliant component
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