onsemi 650 V 30 A Diode Schottky 2-Pin TO-247 FFSH3065A
- RS Stock No.:
- 178-4270
- Mfr. Part No.:
- FFSH3065A
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (30 units, in tubes of 30)*
TWD6,066.00
(exc. GST)
TWD6,369.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 330 unit(s) shipping from September 28, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | TWD202.20 | TWD6,066.00 |
| 60 - 90 | TWD198.10 | TWD5,943.00 |
| 120 + | TWD194.10 | TWD5,823.00 |
*price indicative
- RS Stock No.:
- 178-4270
- Mfr. Part No.:
- FFSH3065A
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 30A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 1.75V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1.13kA | |
| Peak Reverse Current Ir | 600μA | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.82mm | |
| Standards/Approvals | No | |
| Diameter | 6.85mm | |
| Length | 15.87mm | |
| Height | 20.82mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 30A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 1.75V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1.13kA | ||
Peak Reverse Current Ir 600μA | ||
Maximum Operating Temperature 175°C | ||
Width 4.82mm | ||
Standards/Approvals No | ||
Diameter 6.85mm | ||
Length 15.87mm | ||
Height 20.82mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-247-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-247-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding
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