BGMC1210E6327XUMA1 Infineon RF Amplifier Power Amplifier, 32-Pin 4.2 GHz PG-VQFN-32

View all RF Amplifiers ICs
Bulk discount available

Subtotal (1 unit)*

TWD431.00

(exc. GST)

TWD452.55

(inc. GST)

Add to Basket
Select or type quantity
Orders below TWD1,300.00 (exc. GST) cost TWD500.00.
In Stock
  • 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9TWD431.00
10 - 99TWD388.00
100 - 499TWD358.00
500 - 999TWD332.00
1000 +TWD297.00

*price indicative

RS Stock No.:
349-422
Mfr. Part No.:
BGMC1210E6327XUMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

RF Amplifier

Amplifier Type

Power Amplifier

Operating Frequency

4.2 GHz

Technology

I2C compatible, I3C

Package Type

PG-VQFN-32

Minimum Supply Voltage

3.1V

Maximum Supply Voltage

8V

Pin Count

32

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

Series

BGMC1210

COO (Country of Origin):
PH
The Infineon Bias and control IC designed for power amplifiers. The device is optimized for Doherty PAs and biases up to 2 PAs with 4 DAC outputs per PA but can be used in any PA configuration. The DACs have a resolution of 12 Bit and a current driving capability of 50 mA sourcing and 20 mA sinking. The DACs are organized in two groups with independent supplies and can be operated with positive and negative supply voltages in order to bias LDMOS and GaN transistors. Its offers integrated clamping switches for fast TDD operation of the PA and integrated ADCs to measure supply voltages and drain currents.

Positive and negative output range for LDMOS and GaN PAs

Integrated clamping switches and buffers for fast TDD operation

Integrated 60V ADC for PA current and voltage measurements

Temperature sensor and fast I3C & I2C serial interfaces

Related links