BGAP2D30AE6327XTSA1 Infineon Pre-Driver for Wireless Infrastructure Applications 35.2 dB, 16-Pin 4200 MHz TSNP-16
- RS Stock No.:
- 349-417
- Mfr. Part No.:
- BGAP2D30AE6327XTSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)*
TWD262.00
(exc. GST)
TWD275.10
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from June 29, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | TWD262.00 |
| 10 - 99 | TWD236.00 |
| 100 - 499 | TWD217.00 |
| 500 - 999 | TWD202.00 |
| 1000 + | TWD181.00 |
*price indicative
- RS Stock No.:
- 349-417
- Mfr. Part No.:
- BGAP2D30AE6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Operating Frequency | 4200 MHz | |
| Product Type | Pre-Driver for Wireless Infrastructure Applications | |
| Technology | BiCMOS | |
| Gain | 35.2dB | |
| Package Type | TSNP-16 | |
| Minimum Supply Voltage | 4.75V | |
| Maximum Supply Voltage | 5.5V | |
| Pin Count | 16 | |
| Third Order Intercept OIP3 | 34.5dBm | |
| Minimum Operating Temperature | -40°C | |
| Noise Figure | 4.5dB | |
| Maximum Operating Temperature | 115°C | |
| Height | 8mm | |
| Standards/Approvals | RoHS, JEDEC47/20/22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Operating Frequency 4200 MHz | ||
Product Type Pre-Driver for Wireless Infrastructure Applications | ||
Technology BiCMOS | ||
Gain 35.2dB | ||
Package Type TSNP-16 | ||
Minimum Supply Voltage 4.75V | ||
Maximum Supply Voltage 5.5V | ||
Pin Count 16 | ||
Third Order Intercept OIP3 34.5dBm | ||
Minimum Operating Temperature -40°C | ||
Noise Figure 4.5dB | ||
Maximum Operating Temperature 115°C | ||
Height 8mm | ||
Standards/Approvals RoHS, JEDEC47/20/22 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon 3.3 to 4.2 GHz mid band driver amplifier that can be used as pre driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications.
BiCMOS technology for an optimized performance
High gain and high power for fewer components in line up
Internal matching and saving external matching components
Easy design in and small area footprint
Related links
- BGAP2S30AE6327XTSA1 Infineon Pre-Driver for Wireless Infrastructure Applications 35 dB, 16-Pin 4200 MHz TSNP-16
- BGAP2S20AE6327XTSA1 Infineon Pre-Driver for Wireless Infrastructure Applications 34.8 dB, 16-Pin 2700 MHz TSNP-16
- BGAP2D20AE6327XTSA1 Infineon Pre-Driver for Wireless Infrastructure Applications 35.1 dB, 16-Pin 2700 MHz TSNP-16
- Infineon RF Amplifier Low Noise 22.2 dB, 6-Pin 1300 MHz TSNP
- RF Amplifiers ICs
- BGMC1210E6327XUMA1 Infineon RF Amplifier Power Amplifier, 32-Pin 4.2 GHz PG-VQFN-32
- Aim-TTi WA301 RF Amplifier 20 V, 10kΩ
- Aaronia Ag 302/001 RF Amplifier 3 V, 0.05kΩ