BGAP2D30AE6327XTSA1 Infineon Pre-Driver for Wireless Infrastructure Applications 35.2 dB, 16-Pin 4200MHz TSNP-16
- RS Stock No.:
- 349-417
- Mfr. Part No.:
- BGAP2D30AE6327XTSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD262.00
(exc. GST)
TWD275.10
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from February 24, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | TWD262.00 |
| 10 - 99 | TWD236.00 |
| 100 - 499 | TWD217.00 |
| 500 - 999 | TWD202.00 |
| 1000 + | TWD181.00 |
*price indicative
- RS Stock No.:
- 349-417
- Mfr. Part No.:
- BGAP2D30AE6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Pre-Driver for Wireless Infrastructure Applications | |
| Technology | BiCMOS | |
| Gain | 35.2dB | |
| Minimum Supply Voltage | 4.75V | |
| Package Type | TSNP-16 | |
| Pin Count | 16 | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Operating Temperature | -40°C | |
| Third Order Intercept OIP3 | 34.5dBm | |
| Noise Figure | 4.5dB | |
| Maximum Operating Temperature | 115°C | |
| Height | 8mm | |
| Standards/Approvals | RoHS, JEDEC47/20/22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Pre-Driver for Wireless Infrastructure Applications | ||
Technology BiCMOS | ||
Gain 35.2dB | ||
Minimum Supply Voltage 4.75V | ||
Package Type TSNP-16 | ||
Pin Count 16 | ||
Maximum Supply Voltage 5.5V | ||
Minimum Operating Temperature -40°C | ||
Third Order Intercept OIP3 34.5dBm | ||
Noise Figure 4.5dB | ||
Maximum Operating Temperature 115°C | ||
Height 8mm | ||
Standards/Approvals RoHS, JEDEC47/20/22 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon 3.3 to 4.2 GHz mid band driver amplifier that can be used as pre driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications.
BiCMOS technology for an optimized performance
High gain and high power for fewer components in line up
Internal matching and saving external matching components
Easy design in and small area footprint
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