Renesas Electronics Half-Bridge Driver for ISL2111
- RS Stock No.:
- 249-8414
- Mfr. Part No.:
- HIP2211EVAL2Z
- Manufacturer:
- Renesas Electronics
Subtotal (1 unit)*
TWD2,385.00
(exc. GST)
TWD2,504.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
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- 1 left, ready to ship from another location
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Units | Per unit |
|---|---|
| 1 + | TWD2,385.00 |
*price indicative
- RS Stock No.:
- 249-8414
- Mfr. Part No.:
- HIP2211EVAL2Z
- Manufacturer:
- Renesas Electronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Product Type | Evaluation Board | |
| Power Management Function | Half-Bridge Driver | |
| For Use With | ISL2111 | |
| Kit Classification | Evaluation Board | |
| Standards/Approvals | No | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Product Type Evaluation Board | ||
Power Management Function Half-Bridge Driver | ||
For Use With ISL2111 | ||
Kit Classification Evaluation Board | ||
Standards/Approvals No | ||
The Renesas Electronics boards are designed to provide a quick and comprehensive method for evaluating the HIP2211 100V, high-frequency half-bridge driver for driving the gates of two N-channel MOSFETs in a half-bridge configuration. Two N-channel MOSFETs (with dual footprint supporting multiple packages such as TO220 and DPAK) and an inductor-capacitor LC filter are included on the evaluation boards to allow for the evaluation of a half-bridge driven load such as a synchronous buck switching regulator. The HIP2211 half-bridge driver is offered in an 8 Ld SOIC, 8 Ld DFN or 10 Ld DFN package (with enhanced thermal EPAD). This evaluation board is designed for the 10 Ld DFN package. The 8 Ld DFN package can fit on this board as well. Both boards operate from a supply voltage of 6V to 18V DC with the capability of driving both the high-side and the low-side MOSFETs in a 100V half-bridge configuration.
3A source and 4A sink NMOS gate drivers
Internal level shifter and bootstrap diode for gate driver on high-side NFET
Up to 100V high-side bootstrap reference
6V to 18V bias supply operation
Fast 15ns typical propagation delay and 2ns typical propagation delay match supports up to 1MHz operation
