SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D

RS Stock No.:: 915-8842P
Mfr. Part No.:: C3M0280090D
Manufacturer:: Wolfspeed

SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D

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640 In stock for delivery within 6 working days

Price (VAT excluded) Each (Supplied in a Tube)

TWD181.50

(exc. GST)

TWD190.58

(inc. GST)

Units	Per unit
8 - 14	TWD181.50
16 +	TWD178.50

RS Stock No.:: 915-8842P
Mfr. Part No.:: C3M0280090D
Manufacturer:: Wolfspeed

C3M0280090D Silicon Carbide Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11.5 A
Maximum Drain Source Voltage	900 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	360 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	1.8V
Maximum Power Dissipation	54 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +18 V
Transistor Material	SiC
Width	21.1mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	16.13mm
Typical Gate Charge @ Vgs	9.5 nC @ 15 V
Forward Diode Voltage	4.8V
Minimum Operating Temperature	-55 °C
Height	5.21mm

SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D

Wolfspeed Silicon Carbide Power MOSFETs