N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS

RS Stock No.:: 827-4919P
Mfr. Part No.:: CSD19536KCS
Manufacturer:: Texas Instruments

N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS

38 In stock for delivery within 6 working days

Price (VAT excluded) Each (Supplied in a Tube)

TWD156.50

(exc. GST)

TWD164.32

(inc. GST)

Units	Per unit
14 - 24	TWD156.50
26 +	TWD154.50

RS Stock No.:: 827-4919P
Mfr. Part No.:: CSD19536KCS
Manufacturer:: Texas Instruments

ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	259 A
Maximum Drain Source Voltage	100 V
Series	NexFET
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	3.2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.2V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	375 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.67mm
Width	4.7mm
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	118 nC @ 10 V
Height	16.51mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 259 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19536KCS

N-Channel NexFET™ Power MOSFET, Texas Instruments