onsemi Isolated PowerTrench 2 Type N-Channel Dual N-Channel Power Trench MOSFET, 12 A, 40 V Enhancement, 8-Pin Power 33
- RS Stock No.:
- 806-3504
- Mfr. Part No.:
- FDMC8030
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 5 units)*
TWD238.00
(exc. GST)
TWD249.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
- 370 left, ready to ship from another location
- Final 2,150 unit(s) shipping from January 27, 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 745 | TWD47.60 | TWD238.00 |
| 750 - 1495 | TWD46.20 | TWD231.00 |
| 1500 + | TWD45.60 | TWD228.00 |
*price indicative
- RS Stock No.:
- 806-3504
- Mfr. Part No.:
- FDMC8030
- Manufacturer:
- onsemi
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Dual N-Channel Power Trench MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | PowerTrench | |
| Package Type | Power 33 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.9W | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead-Free and RoHS | |
| Length | 3mm | |
| Width | 3 mm | |
| Height | 0.75mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Dual N-Channel Power Trench MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series PowerTrench | ||
Package Type Power 33 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.9W | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead-Free and RoHS | ||
Length 3mm | ||
Width 3 mm | ||
Height 0.75mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
MOSFET Transistors, ON Semi
Related links
- onsemi Isolated PowerTrench 2 Type N-Channel Power MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel Power MOSFET 30 V Enhancement, 8-Pin SOIC FDS8984
- onsemi Isolated PowerTrench 2 Type P-Channel Power MOSFET 20 V Enhancement, 6-Pin MicroFET Thin FDME1023PZT
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 80 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin MLP
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin MicroFET
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 20 V Enhancement, 8-Pin SOIC
