Vishay IRFP Type P-Channel MOSFET, 21 A, 100 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 540-9727
- Distrelec Article No.:
- 301-91-590
- Mfr. Part No.:
- IRFP9140PBF
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 unit)*
TWD95.00
(exc. GST)
TWD99.75
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 214 unit(s) ready to ship from another location
- Plus 227 unit(s) shipping from February 04, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 6 | TWD95.00 |
| 7 - 12 | TWD93.00 |
| 13 + | TWD92.00 |
*price indicative
- RS Stock No.:
- 540-9727
- Distrelec Article No.:
- 301-91-590
- Mfr. Part No.:
- IRFP9140PBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IRFP | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -5V | |
| Maximum Power Dissipation Pd | 180W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.31 mm | |
| Length | 15.87mm | |
| Height | 20.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IRFP | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -5V | ||
Maximum Power Dissipation Pd 180W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Operating Temperature 175°C | ||
Width 5.31 mm | ||
Length 15.87mm | ||
Height 20.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Ease of paralleling
Related links
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