Infineon HEXFET N-Channel MOSFET, 29 A, 55 V Enhancement, 3-Pin TO-263 IRFZ34NSTRLPBF

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Subtotal (1 pack of 10 units)*

TWD535.00

(exc. GST)

TWD561.80

(inc. GST)

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Units
Per unit
Per Pack*
10 - 10TWD53.50TWD535.00
20 - 40TWD52.30TWD523.00
50 - 90TWD47.50TWD475.00
100 - 240TWD42.90TWD429.00
250 +TWD41.70TWD417.00

*price indicative

Packaging Options:
RS Stock No.:
262-6784
Distrelec Article No.:
304-41-681
Mfr. Part No.:
IRFZ34NSTRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has features such as 175°C operating temperature, fast switching speed.

Fully avalanche rated

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