Infineon HEXFET Type N-Channel MOSFET, 29 A, 55 V Enhancement, 3-Pin TO-263 IRFZ34NSTRLPBF

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Subtotal (1 pack of 10 units)*

TWD212.00

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TWD222.60

(inc. GST)

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  • 280 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 10TWD21.20TWD212.00
20 - 40TWD20.80TWD208.00
50 - 90TWD18.80TWD188.00
100 - 240TWD17.00TWD170.00
250 +TWD16.50TWD165.00

*price indicative

Packaging Options:
RS Stock No.:
262-6784
Distrelec Article No.:
304-41-681
Mfr. Part No.:
IRFZ34NSTRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has features such as 175°C operating temperature, fast switching speed.

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