Infineon HEXFET Type P-Channel MOSFET, -42 A, -55 V TO-263 AUIRF4905STRL
- RS Stock No.:
- 260-5059
- Mfr. Part No.:
- AUIRF4905STRL
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 unit)*
TWD167.00
(exc. GST)
TWD175.35
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 375 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 24 | TWD167.00 |
| 25 - 49 | TWD150.00 |
| 50 - 99 | TWD148.00 |
| 100 - 249 | TWD123.00 |
| 250 + | TWD120.00 |
*price indicative
- RS Stock No.:
- 260-5059
- Mfr. Part No.:
- AUIRF4905STRL
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -42A | |
| Maximum Drain Source Voltage Vds | -55V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.3V | |
| Maximum Power Dissipation Pd | 170W | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Height | 15.88mm | |
| Standards/Approvals | RoHS | |
| Width | 4.83 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -42A | ||
Maximum Drain Source Voltage Vds -55V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.3V | ||
Maximum Power Dissipation Pd 170W | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Height 15.88mm | ||
Standards/Approvals RoHS | ||
Width 4.83 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon P Channel HEXFET Power MOSFET is specifically design for automotive applications. This power MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Advanced process technology
Ultra low on resistance
Fast switching
Repetitive avalanche allowed up to Tjmax
Related links
- Infineon HEXFET Type P-Channel MOSFET -55 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IRLR2905TRPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IRLR2905TRLPBF
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IRF4905STRLPBF