Infineon IPD Type P-Channel MOSFET, -50 A, -40 V Enhancement, 3-Pin TO-252 IPD50P04P4L11ATMA2
- RS Stock No.:
- 258-3845
- Mfr. Part No.:
- IPD50P04P4L11ATMA2
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD112.00
(exc. GST)
TWD117.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 1,846 unit(s) shipping from June 10, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD56.00 | TWD112.00 |
| 10 - 98 | TWD54.00 | TWD108.00 |
| 100 - 248 | TWD50.50 | TWD101.00 |
| 250 - 498 | TWD46.00 | TWD92.00 |
| 500 + | TWD43.00 | TWD86.00 |
*price indicative
- RS Stock No.:
- 258-3845
- Mfr. Part No.:
- IPD50P04P4L11ATMA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -50A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 58W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -50A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 58W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
No charge pump required for high side drive
Simple interface drive circuit
Highest current capability
Related links
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA2
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement PG-TO-252
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement PG-TO-252 IPD50P03P4L11ATMA2
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement, 3-Pin PG-TO-252
- Infineon IPD Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IPD19DP10NMATMA1
- Infineon IPD Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IPD18DP10LMATMA1