Infineon HEXFET Type N-Channel MOSFET, 3.7 A, 200 V, 8-Pin SO-8 IRF7820TRPBF
- RS Stock No.:
- 257-9320
- Mfr. Part No.:
- IRF7820TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD222.00
(exc. GST)
TWD233.10
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 3,645 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD44.40 | TWD222.00 |
| 50 - 95 | TWD42.20 | TWD211.00 |
| 100 - 495 | TWD39.60 | TWD198.00 |
| 500 - 1995 | TWD36.80 | TWD184.00 |
| 2000 + | TWD32.20 | TWD161.00 |
*price indicative
- RS Stock No.:
- 257-9320
- Mfr. Part No.:
- IRF7820TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.7A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 78mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 330mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.7A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 78mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 330mm | ||
Automotive Standard No | ||
The Infineon IRF series is the 200V single n channel HEXFET power mosfet in a SO 8 package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Normal level is Optimized for 10 V gate drive voltage
Industry standard surface mount package
Capable of being wave soldered
Related links
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- Infineon HEXFET Type N-Channel MOSFET 200 V TO-247
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