Infineon HEXFET Type N-Channel MOSFET, 131 A, 55 V TO-263 IRF1405STRLPBF
- RS Stock No.:
- 257-9276
- Distrelec Article No.:
- 304-40-516
- Mfr. Part No.:
- IRF1405STRLPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD668.00
(exc. GST)
TWD701.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 675 unit(s) shipping from September 07, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | TWD133.60 | TWD668.00 |
| 25 - 45 | TWD121.00 | TWD605.00 |
| 50 - 95 | TWD118.60 | TWD593.00 |
| 100 - 245 | TWD102.20 | TWD511.00 |
| 250 + | TWD100.00 | TWD500.00 |
*price indicative
- RS Stock No.:
- 257-9276
- Distrelec Article No.:
- 304-40-516
- Mfr. Part No.:
- IRF1405STRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 131A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Typical Gate Charge Qg @ Vgs | 170nC | |
| Maximum Power Dissipation Pd | 200W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 131A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Typical Gate Charge Qg @ Vgs 170nC | ||
Maximum Power Dissipation Pd 200W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IRF series is the 55V single n channel HEXFET power mosfet in a D2 Pak package.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
Capable of being wave soldered
Related links
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-263 IRFZ48NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263