Infineon HEXFET Type N-Channel MOSFET, 100 A, 40 V, 4-Pin TO-220 IRF1104PBF
- RS Stock No.:
- 257-9270
- Distrelec Article No.:
- 304-40-514
- Mfr. Part No.:
- IRF1104PBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD179.00
(exc. GST)
TWD187.95
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 840 unit(s) shipping from February 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD35.80 | TWD179.00 |
| 10 - 20 | TWD34.00 | TWD170.00 |
| 25 - 95 | TWD32.00 | TWD160.00 |
| 100 - 495 | TWD29.80 | TWD149.00 |
| 500 + | TWD29.20 | TWD146.00 |
*price indicative
- RS Stock No.:
- 257-9270
- Distrelec Article No.:
- 304-40-514
- Mfr. Part No.:
- IRF1104PBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.009Ω | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 93nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.009Ω | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 93nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IRF series is the 40V single n channel power mosfet in a TO 220 package.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
High current rating
Related links
- Infineon HEXFET Type N-Channel MOSFET 40 V, 4-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-252 AUIRFR8403TRL
- Infineon HEXFET Type N-Channel MOSFET 25 V Enhancement, 4-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 25 V Enhancement, 4-Pin PQFN IRFH5250TRPBF
- Infineon HEXFET Type N-Channel MOSFET 20 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 20 V TO-252 IRLR6225TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin PQFN