Infineon HEXFET Type N-Channel MOSFET, 76 A, 200 V TO-220 IRFB4127PBF
- RS Stock No.:
- 257-5807
- Mfr. Part No.:
- IRFB4127PBF
- Manufacturer:
- Infineon
N
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
TWD161.00
(exc. GST)
TWD169.04
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 944 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD80.50 | TWD161.00 |
| 10 - 18 | TWD72.00 | TWD144.00 |
| 20 - 48 | TWD70.50 | TWD141.00 |
| 50 - 98 | TWD69.50 | TWD139.00 |
| 100 + | TWD59.50 | TWD119.00 |
*price indicative
- RS Stock No.:
- 257-5807
- Mfr. Part No.:
- IRFB4127PBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | PCB | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type PCB | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Industry standard through-hole power package
High-current rating
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Wide portfolio available
Related links
- Infineon Type N-Channel MOSFET 200 V TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-220
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V, 3-Pin TO-247
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V, 3-Pin TO-247 IPW60R037P7XKSA1
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-220 IRFB4620PBF
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-220 IRF200B211
- Infineon CoolMOS Type N-Channel MOSFET 600 V Enhancement, 4-Pin TO-247 IPZA60R037P7XKSA1