Infineon BSP Type P-Channel MOSFET, 680 mA, -100 V Enhancement, 3-Pin SOT-223 BSP316PH6327XTSA1
- RS Stock No.:
- 250-0536
- Distrelec Article No.:
- 304-40-496
- Mfr. Part No.:
- BSP316PH6327XTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 5 units)*
TWD187.00
(exc. GST)
TWD196.35
(inc. GST)
FREE delivery for orders over NT$1,300.00
- 910 unit(s) ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD37.40 | TWD187.00 |
| 10 - 95 | TWD33.80 | TWD169.00 |
| 100 - 245 | TWD30.00 | TWD150.00 |
| 250 - 495 | TWD27.80 | TWD139.00 |
| 500 + | TWD24.60 | TWD123.00 |
*price indicative
- RS Stock No.:
- 250-0536
- Distrelec Article No.:
- 304-40-496
- Mfr. Part No.:
- BSP316PH6327XTSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 680mA | |
| Maximum Drain Source Voltage Vds | -100V | |
| Package Type | SOT-223 | |
| Series | BSP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1800mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 680mA | ||
Maximum Drain Source Voltage Vds -100V | ||
Package Type SOT-223 | ||
Series BSP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1800mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSP Series MOSFET, 100V Maximum Drain‑Source Voltage, +150°C Maximum Operating Temperature - BSP316PH6327XTSA1
Features and Benefits:
• 0.68A continuous drain current supports low‑to‑moderate load switching
• 80nC typical gate charge enables Faster gate transitions with lower drive energy
• 81W power dissipation allows sustained energy handling in constrained packages
• +150°C maximum operating temperature permits use in high‑temperature assemblies
Applications
• Ideal for surface‑mount regulator and load‑switch circuits
• Used with battery management and low‑current switching modules
• Can be used for thermal‑tolerant power‑path control on Compact boards
• Suitable for designs requiring RoHS‑compliant P‑channel components
What gate voltage limits must be observed during operation?
What package and mounting style does it use for PCB integration?
What electrothermal behaviour applies for sustained dissipation?
Is the device qualified for automotive environments?
What environmental restriction standard does it meet?
Related links
- Infineon BSP Type P-Channel MOSFET -100 V Enhancement, 3-Pin SOT-223 BSP316PH6327XTSA1
- Infineon BSP N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223 BSP296NH6433XTMA1
- Vishay IRFL Type P-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223 IRFL9110TRPBF
- Infineon ISP Type P-Channel MOSFET 100 V Enhancement, 3-Pin SOT-223 ISP20EP10LMXTSA1
- DiodesZetex Type P-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223 ZVP2110GTA
- DiodesZetex Quad 4 Type P 800 mA 8-Pin SOT-223 ZXMHC10A07T8TA
- DiodesZetex Quad 4 Type P 800 mA 8-Pin SOT-223
- onsemi Isolated 2 Type P 680 mA 6-Pin SOT-23 FDC6321C
