DiodesZetex DMN Type N-Channel MOSFET, 10.7 A, 12 V Enhancement, 10-Pin 4-DSN3015-10 DMN12M8UCA10-7
- RS Stock No.:
- 244-1915
- Mfr. Part No.:
- DMN12M8UCA10-7
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
TWD445.00
(exc. GST)
TWD467.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 4,925 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | TWD17.80 | TWD445.00 |
| 50 - 475 | TWD17.40 | TWD435.00 |
| 500 - 975 | TWD17.00 | TWD425.00 |
| 1000 + | TWD16.60 | TWD415.00 |
*price indicative
- RS Stock No.:
- 244-1915
- Mfr. Part No.:
- DMN12M8UCA10-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | 4-DSN3015-10 | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 36.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 1.54 mm | |
| Length | 3.03mm | |
| Height | 0.16mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type 4-DSN3015-10 | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 36.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 1.54 mm | ||
Length 3.03mm | ||
Height 0.16mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex MOSFET is designed to minimize the on state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications.
ESD protection of gate
Totally lead free and fully RoHS compliant
Halogen and antimony free green device
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