Infineon IPT Type N-Channel MOSFET, 333 A, 80 V, 8-Pin HSOF-8 IPT013N08NM5LFATMA1
- RS Stock No.:
- 236-1586
- Mfr. Part No.:
- IPT013N08NM5LFATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 2000 units)*
TWD214,800.00
(exc. GST)
TWD225,540.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from June 11, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 8000 | TWD107.40 | TWD214,800.00 |
| 10000 + | TWD104.20 | TWD208,400.00 |
*price indicative
- RS Stock No.:
- 236-1586
- Mfr. Part No.:
- IPT013N08NM5LFATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 333A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | IPT | |
| Package Type | HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 158nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.1mm | |
| Standards/Approvals | No | |
| Width | 10.58 mm | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 333A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series IPT | ||
Package Type HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 158nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 10.1mm | ||
Standards/Approvals No | ||
Width 10.58 mm | ||
Height 2.4mm | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 Linear FET, 80 V MOSFET . This product is fully qualified according to JEDEC for industrial applications .
Ideal for hot-swap and e-fuse applications
Very low on-resistance RDS(on)
Wide safe operating area SOA
N-channel, normal level
100% avalanche tested
Pb-free plating, halogen-free
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