Infineon CoolSiC Type N-Channel MOSFET, 52 A, 1200 V Enhancement, 3-Pin TO-247 AIMW120R035M1HXKSA1

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 unit)*

TWD1,074.00

(exc. GST)

TWD1,127.70

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 190 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9TWD1,074.00
10 - 49TWD1,042.00
50 - 99TWD1,005.00
100 - 149TWD964.00
150 +TWD921.00

*price indicative

Packaging Options:
RS Stock No.:
233-3487
Mfr. Part No.:
AIMW120R035M1HXKSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

52A

Maximum Drain Source Voltage Vds

1200V

Series

CoolSiC

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

228W

Maximum Gate Source Voltage Vgs

23 V

Forward Voltage Vf

5.2V

Typical Gate Charge Qg @ Vgs

59nC

Maximum Operating Temperature

175°C

Height

5.3mm

Width

21.5 mm

Standards/Approvals

No

Length

16.3mm

Automotive Standard

AEC-Q101

The Infineon CoolSiC MOSFETs for automotive family has been developed for current and future on board Charger and DC-DC applications in hybrid and electric vehicles. It has 52 A drain current.

Efficiency improvement

Enabling higher frequency

Increased power density

Cooling effort reduction

Related links