Infineon Dual IPG 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin SuperSO IPG20N04S4L11AATMA1
- RS Stock No.:
- 229-1845
- Mfr. Part No.:
- IPG20N04S4L11AATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 15 units)*
TWD411.00
(exc. GST)
TWD431.55
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 4,950 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | TWD27.40 | TWD411.00 |
| 30 - 75 | TWD26.80 | TWD402.00 |
| 90 - 225 | TWD26.10 | TWD391.50 |
| 240 - 465 | TWD25.40 | TWD381.00 |
| 480 + | TWD24.90 | TWD373.50 |
*price indicative
- RS Stock No.:
- 229-1845
- Mfr. Part No.:
- IPG20N04S4L11AATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO | |
| Series | IPG | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 41W | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Length | 5.15mm | |
| Width | 5.9 mm | |
| Height | 1mm | |
| Standards/Approvals | AEC-Q101 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO | ||
Series IPG | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 41W | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Length 5.15mm | ||
Width 5.9 mm | ||
Height 1mm | ||
Standards/Approvals AEC-Q101 | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon dual n channel logic level MOSFET is feasible for automatic optical inspection. It has 175°C operating temperature and 100 percent avalanche tested.
It is RoHS compliant and AEC Q101 qualified
Related links
- Infineon Dual IPG 2 Type N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO
- Infineon Dual N IPG 2 Type N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO
- Infineon Dual N IPG 2 Type N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO IPG20N04S412AATMA1
- Infineon Dual N Channel Normal Level IPG 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO
- Infineon Dual CoolMOS 2 Type N-Channel Power Transistor 100 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor 100 V Enhancement, 8-Pin TDSON
- Infineon Dual IPG20 2 Type N-Channel Power Transistor 40 V Enhancement, 8-Pin TDSON
- Infineon Dual CoolMOS 2 Type N-Channel Power Transistor 100 V Enhancement, 8-Pin TDSON IPG20N10S4L22ATMA1