Infineon Dual HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8 AUIRF7341QTR
- RS Stock No.:
- 223-8453
- Mfr. Part No.:
- AUIRF7341QTR
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD675.00
(exc. GST)
TWD708.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | TWD67.50 | TWD675.00 |
| 20 - 90 | TWD65.80 | TWD658.00 |
| 100 - 240 | TWD64.20 | TWD642.00 |
| 250 - 490 | TWD62.50 | TWD625.00 |
| 500 + | TWD60.90 | TWD609.00 |
*price indicative
- RS Stock No.:
- 223-8453
- Mfr. Part No.:
- AUIRF7341QTR
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.1A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Gate Source Voltage Vgs | 3 V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.5mm | |
| Length | 5mm | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.1A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Gate Source Voltage Vgs 3 V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Height 1.5mm | ||
Length 5mm | ||
Width 4 mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon HEXFET power MOSFET in a dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications.
Advanced planar technology
Dynamic dV/dT rating
Logic level gate drive
175°C operating temperature
Fast switching
Lead free
RoHS compliant
Automotive qualified
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