Silicon N-Channel MOSFET, 111 A, 650 V, 3-Pin TO-247 Infineon IPW60R018CFD7XKSA1
- RS Stock No.:
- 222-4719
- Mfr. Part No.:
- IPW60R018CFD7XKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)**
Was TWD651.00
You pay
TWD483.00
(exc. GST)
TWD507.15
(inc. GST)
663 In stock for delivery within 6 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over TWD2,857.00 (ex VAT)
Units | Per unit |
---|---|
1 - 9 | TWD483.00 |
10 - 99 | TWD471.00 |
100 - 249 | TWD459.00 |
250 - 499 | TWD448.00 |
500 + | TWD437.00 |
**price indicative
- RS Stock No.:
- 222-4719
- Mfr. Part No.:
- IPW60R018CFD7XKSA1
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 111 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | TO-247 | |
Series | CoolMOS™ | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.018 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Transistor Material | Silicon | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 111 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Series CoolMOS™ | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.018 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||