DiodesZetex Dual DMN Type N-Channel MOSFET, 4.6 A, 20 V Enhancement, 6-Pin TSOT-26
- RS Stock No.:
- 222-2826
- Mfr. Part No.:
- DMN2053UVTQ-7
- Manufacturer:
- DiodesZetex
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 222-2826
- Mfr. Part No.:
- DMN2053UVTQ-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSOT-26 | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.035Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 3.6nC | |
| Maximum Power Dissipation Pd | 1.1W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSOT-26 | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.035Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 3.6nC | ||
Maximum Power Dissipation Pd 1.1W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex dual N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
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