Infineon HEXFET Type P-Channel MOSFET & Diode, 5.6 A, 20 V Enhancement, 2-Pin TO-263 IRLMS6802TRPBF
- RS Stock No.:
- 220-7501
- Mfr. Part No.:
- IRLMS6802TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 50 units)*
TWD340.00
(exc. GST)
TWD357.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 14,550 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 700 | TWD6.80 | TWD340.00 |
| 750 - 1450 | TWD6.60 | TWD330.00 |
| 1500 + | TWD6.50 | TWD325.00 |
*price indicative
- RS Stock No.:
- 220-7501
- Mfr. Part No.:
- IRLMS6802TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 5.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 175°C | |
| Height | 3mm | |
| Width | 1 mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 5.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 175°C | ||
Height 3mm | ||
Width 1 mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Automotive Standard No | ||
The Infineon P-Channel MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6 package with its customized lead frame produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. The unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
Related links
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- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263