Infineon HEXFET Type N-Channel MOSFET, 269 A, 75 V Enhancement, 7-Pin TO-263

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Subtotal (1 reel of 800 units)*

TWD46,400.00

(exc. GST)

TWD48,720.00

(inc. GST)

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Units
Per unit
Per Reel*
800 - 3200TWD58.00TWD46,400.00
4000 +TWD56.80TWD45,440.00

*price indicative

RS Stock No.:
218-3123
Mfr. Part No.:
IRFS7730TRL7PP
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

269A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

428nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

4.83 mm

Length

10.67mm

Height

9.65mm

Automotive Standard

No

The Infineon HEXFET series single N-Channel Power MOSFET. Integrated with D2PAK 7pin (TO-263 7pin) type package.

Lead-free, RoHS compliant

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