Infineon HEXFET Type N-Channel MOSFET, 324 A, 25 V, 8-Pin SuperSO IRFH8201TRPBF
- RS Stock No.:
- 218-3104
- Mfr. Part No.:
- IRFH8201TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD374.00
(exc. GST)
TWD392.70
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from May 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 990 | TWD37.40 | TWD374.00 |
| 1000 - 1990 | TWD36.50 | TWD365.00 |
| 2000 + | TWD34.10 | TWD341.00 |
*price indicative
- RS Stock No.:
- 218-3104
- Mfr. Part No.:
- IRFH8201TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 324A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SuperSO | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 156W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Standards/Approvals | No | |
| Length | 6mm | |
| Width | 5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 324A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SuperSO | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 156W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Standards/Approvals No | ||
Length 6mm | ||
Width 5 mm | ||
Automotive Standard No | ||
The Infineon HEXFET series single N-Channel Power MOSFET. It is mainly used in battery operated DC motor inverters.
Compatible with Existing Surface Mount Techniques
Low Thermal Resistance to PCB (<0.8°C/W)
RoHS Compliant, Halogen-Free
Related links
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