Infineon IPD N-Channel MOSFET, 14.7 A, 600 V Enhancement, 3-Pin TO-252 IPD60R400CEAUMA1
- RS Stock No.:
- 217-2526
- Mfr. Part No.:
- IPD60R400CEAUMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 217-2526
- Mfr. Part No.:
- IPD60R400CEAUMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14.7A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 900mV | |
| Maximum Power Dissipation Pd | 41W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14.7A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 900mV | ||
Maximum Power Dissipation Pd 41W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Height 2.41mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Related links
- Infineon IPD N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon IPD N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R1K5CEAUMA1
- Infineon IPD N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R600P7SAUMA1
- Infineon IPD N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R360P7SAUMA1
- Infineon IPD N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R600P7ATMA1
- Infineon IPD N-Channel MOSFET 120 V Enhancement, 3-Pin PG-TO-252 IPD35N12S3L24ATMA1
- Infineon IPD N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IPD60N10S412ATMA1
- Infineon IPD N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD023N04NF2SATMA1