Infineon StrongIRFET Type N-Channel MOSFET, 97 A, 100 V Enhancement, 3-Pin TO-262 IRFSL4410ZPBF
- RS Stock No.:
- 215-2603
- Mfr. Part No.:
- IRFSL4410ZPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD448.00
(exc. GST)
TWD470.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 1,085 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | TWD89.60 | TWD448.00 |
| 15 - 20 | TWD87.20 | TWD436.00 |
| 25 + | TWD85.80 | TWD429.00 |
*price indicative
- RS Stock No.:
- 215-2603
- Mfr. Part No.:
- IRFSL4410ZPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 97A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | StrongIRFET | |
| Package Type | TO-262 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 230W | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 97A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series StrongIRFET | ||
Package Type TO-262 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 230W | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Strong IRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. It has applications such us high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard through-hole power package
High-current rating
Related links
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- Infineon StrongIRFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220