Infineon CoolMOS C7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 214-9116
- Mfr. Part No.:
- IPW60R180C7XKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 30 units)*
TWD1,791.00
(exc. GST)
TWD1,880.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 180 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | TWD59.70 | TWD1,791.00 |
| 60 - 90 | TWD58.40 | TWD1,752.00 |
| 120 + | TWD57.10 | TWD1,713.00 |
*price indicative
- RS Stock No.:
- 214-9116
- Mfr. Part No.:
- IPW60R180C7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | CoolMOS C7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Standards/Approvals | No | |
| Height | 21.1mm | |
| Width | 5.21 mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series CoolMOS C7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Standards/Approvals No | ||
Height 21.1mm | ||
Width 5.21 mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. These are Suitable for hard and soft switching functions. Suitable for applications such as server, telecom and solar.
Suitable for hard and soft switching
Qualified for industrial grade applications according to JEDEC
Related links
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- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247