Infineon HEXFET N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-252 AUIRFR540Z
- RS Stock No.:
- 214-8951
- Mfr. Part No.:
- AUIRFR540Z
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 75 units)*
TWD3,397.50
(exc. GST)
TWD3,567.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 1,650 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 75 | TWD45.30 | TWD3,397.50 |
| 150 - 225 | TWD44.00 | TWD3,300.00 |
| 300 + | TWD42.70 | TWD3,202.50 |
*price indicative
- RS Stock No.:
- 214-8951
- Mfr. Part No.:
- AUIRFR540Z
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 28.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Power Dissipation Pd | 91W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.22mm | |
| Width | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 28.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Power Dissipation Pd 91W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.22mm | ||
Width 6.73mm | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Advanced Process Technology
Ultra Low On-Resistance
Automotive Qualified
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