Vishay TrenchFET Gen IV Type N-Channel MOSFET, 108 A, 45 V Enhancement, 8-Pin PowerPAK 1212
- RS Stock No.:
- 200-6847
- Mfr. Part No.:
- SISS50DN-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 50 units)*
TWD1,165.00
(exc. GST)
TWD1,223.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from August 03, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 700 | TWD23.30 | TWD1,165.00 |
| 750 - 1450 | TWD22.80 | TWD1,140.00 |
| 1500 + | TWD22.40 | TWD1,120.00 |
*price indicative
- RS Stock No.:
- 200-6847
- Mfr. Part No.:
- SISS50DN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 108A | |
| Maximum Drain Source Voltage Vds | 45V | |
| Series | TrenchFET Gen IV | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Maximum Power Dissipation Pd | 65.7W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Height | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 108A | ||
Maximum Drain Source Voltage Vds 45V | ||
Series TrenchFET Gen IV | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Maximum Power Dissipation Pd 65.7W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Height 3.3mm | ||
Automotive Standard No | ||
The Vishay SISS50DN-T1-GE3 is a N-channel 45V (D-S) MOSFET.
TrenchFET Gen IV power MOSFET
Very low RDS(on) in a compact and thermally enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
100 % Rg and UIS tested
Related links
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 45 V Enhancement, 8-Pin PowerPAK 1212 SISS50DN-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SiSS22LDN-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8
- Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET 25 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8 SIS476DN-T1-GE3
- Vishay TrenchFET Gen III Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212