Vishay SiHU4N80AE Type N-Channel MOSFET, 4.1 A, 800 V Enhancement, 3-Pin IPAK SIHU4N80AE-GE3
- RS Stock No.:
- 188-4879
- Mfr. Part No.:
- SIHU4N80AE-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 75 units)*
TWD3,757.50
(exc. GST)
TWD3,945.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from February 11, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 75 | TWD50.10 | TWD3,757.50 |
| 150 - 225 | TWD48.60 | TWD3,645.00 |
| 300 + | TWD47.10 | TWD3,532.50 |
*price indicative
- RS Stock No.:
- 188-4879
- Mfr. Part No.:
- SIHU4N80AE-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | IPAK | |
| Series | SiHU4N80AE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.44Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 2.38mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type IPAK | ||
Series SiHU4N80AE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.44Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Operating Temperature 150°C | ||
Height 6.22mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 2.38mm | ||
Automotive Standard No | ||
E Series Power MOSFET
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Related links
- Vishay SiHU4N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK SIHU4N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK SIHU2N80AE-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin IPAK SIHU5N80AE-GE3
- Vishay IRFBE30 Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB IRFBE30PBF
- STMicroelectronics MDmesh 2.5 A 3-Pin IPAK
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK IPU80R900P7AKMA1
- STMicroelectronics MDmesh 2.5 A 3-Pin IPAK STD3NK80Z-1