Vishay Type P-Channel MOSFET, 35 A, 40 V, 8-Pin PowerPAK 1212-8 SIS443DN-T1-GE3
- RS Stock No.:
- 180-7730
- Mfr. Part No.:
- SIS443DN-T1-GE3
- Manufacturer:
- Vishay
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- RS Stock No.:
- 180-7730
- Mfr. Part No.:
- SIS443DN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0117Ω | |
| Typical Gate Charge Qg @ Vgs | 41.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 52W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.79mm | |
| Length | 3.61mm | |
| Width | 3.61 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0117Ω | ||
Typical Gate Charge Qg @ Vgs 41.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 52W | ||
Maximum Operating Temperature 150°C | ||
Height 0.79mm | ||
Length 3.61mm | ||
Width 3.61 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 11.7mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 52W and continuous drain current of 35A. It has a minimum and a maximum driving voltage 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Adaptor switches
• DC/DC converters
• Load switches
• Mobile computing
• Notebook computers
• Power management
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
Related links
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- Vishay TrenchFET Gen III Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212-8
- Vishay Si7615ADN Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212-8 SI7615ADN-T1-GE3
- Vishay Type P-Channel MOSFET 150 V, 8-Pin PowerPAK 1212-8
- Vishay Type P-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8
- Vishay Type P-Channel MOSFET 150 V, 8-Pin PowerPAK 1212-8 SI7315DN-T1-GE3
- Vishay Type P-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8 SI7415DN-T1-GE3