Vishay IRF Type N-Channel MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220 IRF820APBF
- RS Stock No.:
- 178-0833
- Mfr. Part No.:
- IRF820APBF
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 50 units)*
TWD1,280.00
(exc. GST)
TWD1,344.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 700 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD25.60 | TWD1,280.00 |
| 100 - 150 | TWD25.00 | TWD1,250.00 |
| 200 + | TWD24.40 | TWD1,220.00 |
*price indicative
- RS Stock No.:
- 178-0833
- Mfr. Part No.:
- IRF820APBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRF | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.01mm | |
| Standards/Approvals | No | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRF | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Operating Temperature 150°C | ||
Height 9.01mm | ||
Standards/Approvals No | ||
Length 10.41mm | ||
Automotive Standard No | ||
The Vishay power MOSFET has low gate charge Qg results in simple drive requirement and it has improved gate, avalanche and dynamic dV/dt ruggedness.
Operating junction and storage temperature range - 55 to + 150°C
Related links
- Vishay IRF Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 IRF820PBF
- Vishay IRF Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220AB IRF840PBF
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220