Toshiba Type N-Channel MOSFET, 30.8 A, 600 V Enhancement, 5-Pin DFN

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Bulk discount available

Subtotal (1 reel of 2500 units)*

TWD378,250.00

(exc. GST)

TWD397,150.00

(inc. GST)

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Units
Per unit
Per Reel*
2500 - 2500TWD151.30TWD378,250.00
5000 - 22500TWD146.70TWD366,750.00
25000 +TWD132.10TWD330,250.00

*price indicative

RS Stock No.:
171-2421
Mfr. Part No.:
TK31V60W5
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30.8A

Maximum Drain Source Voltage Vds

600V

Package Type

DFN

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

109mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

240W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

105nC

Forward Voltage Vf

-1.7V

Maximum Operating Temperature

150°C

Height

0.85mm

Length

8mm

Width

8 mm

Standards/Approvals

No

Automotive Standard

No

RoHS Status: Exempt

COO (Country of Origin):
CN
Switching Voltage Regulators

Fast reverse recovery time: trr = 135 ns (typ.)

Low drain-source on-resistance: RDS(ON) = 0.087 Ω(typ.)

Easy to control Gate switching

Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA)

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